1999. 11. 30 1/3 semiconductor technical data KTD1146 epitaxial planar npn transistor revision no : 2 high current application camera strobo (for electronic flash unit) features low v ce(sat) . high performance at low supply voltage. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7 v collector current dc i c 5 a pulse (note1) i cp 8 collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector base breakdown voltage v (br)cbo i c =100 a, i e =0 40 - - v collector emitter breakdown voltage v (br)ceo i c =1ma, i b =0 20 - - v emitter base breakdown voltage v (br)ebo i e =10 a, i c =0 7 - - v collector cutoff current i cbo v cb =20v, i e =0 - - 100 na emitter cutoff current i ebo v eb =7v, i c =0 - - 100 na dc current gain h fe (1) (note1) v ce =2v, i c =0.5a 120 - 700 h fe (2) v ce =2v, i c =2a 100 - - collector-emitter saturation voltage v ce(sat) i c =3a, i b =60ma(pulse) - - 0.4 v transition frequency f t v ce =6v, i c =50ma 20 100 - mhz collector output capacitance c ob v cb =20v, f=1mhz, i e =0 - - 50 pf note 1: pulse width # 100ms, duty cycle # 30% note1) : h fe (1) classification o:120 240, y:200 400, gr:350 700
1999. 11. 30 2/3 KTD1146 revision no : 2 pc - ta ambient temperature ta ( c) 040 20 0.2 c 0 collector power dissipation p (w) collector current i (a) 0 c 0.4 0.4 0 collector-emitter voltage v (v) ce ce c i - v collector current i (a) 0 c 0.4 0.2 0 base-emitter voltage v (v) be be c i - v transition frequency f (mhz) t emitter current i (a) e e t f - i h - i fe c c collector current i (a) 0.01 0.03 100 fe 0 dc current gain h i - v c ce(sat) ce(sat) collector-emitter saturation 0 0.2 0.4 c 0 collector current i (a) 60 80 100 120 140 160 0.4 0.6 0.8 1.0 0.8 1.2 1.6 2.0 2.4 2.8 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 ta=25 c 2ma 3ma 4ma 5ma 6ma i =1ma b 7ma 0.6 0.8 1.0 1.2 1 2 3 4 5 6 7 8 v =10v ta=25 c ce voltage v (v) 0.6 0.8 1.0 1.2 1 2 3 4 5 6 7 8 i /i =30 ta=25 c c b 0 100 0.1 0.3 1 3 10 200 300 400 500 600 700 800 v =2v ta=25 c ce 10 3 1 0.3 0.1 0.03 0.01 200 300 400 v =6v ta=25 c ce
1999. 11. 30 3/3 KTD1146 revision no : 2 collector current i (a) c 0.01 10 0.1 collector-emitter voltage v (v) ce safe operation area c - v ob cb cb collector base voltage v (v) 1310 100 ob 0 output capacitance c (pf) 20 40 60 80 5 30 50 100 i =0 f=1mhz ta=25 c e 0.3 1 3 30 100 0.03 0.1 0.3 1 3 10 30 100 single pulse ta=25 c i cp i c t = 1 0ms t=1 s
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